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FQP33N10 データシートの表示(PDF) - Fairchild Semiconductor

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FQP33N10 100V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQP33N10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
100 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.11
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 16.5 A
-- 0.040 0.052
VDS = 40 V, ID = 16.5 A (Note 4) --
22
--
S
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1150 1500 pF
-- 320 420
pF
--
62
80
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 50 V, ID = 33 A,
RG = 25
--
15
40
ns
-- 195 400
ns
--
80 170
ns
(Note 4, 5)
--
110
230
ns
VDS = 80 V, ID = 33 A,
--
38
51
nC
VGS = 10 V
-- 7.5
--
nC
(Note 4, 5) --
18
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
33
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
132
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 33 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 33 A,
--
80
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.22
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.6mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  33A, di/dt  300A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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