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FQD4N20L View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQD4N20L
Fairchild
Fairchild Semiconductor Fairchild
FQD4N20L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics
101
V
GS
Top : 10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V =5V
GS
V = 10V
GS
4
2
Note : T = 25
J
0
0
2
4
6
8
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
450
400
350
300
250
200
150
100
50
0
10-1
C
iss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
oss
C
rss
Notes :
1. V = 0 V
GS
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
0
150
25
-55
Notes :
1. V = 25V
DS
2. 250μs Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V = 100V
DS
8
VDS = 160V
6
4
2
Note : ID = 3.8 A
0
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000
 

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