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FQD10N20L View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD10N20L N-Channel QFET® MOSFET 200 V, 7.6 A, 360 mΩ Fairchild
Fairchild Semiconductor Fairchild
FQD10N20L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
102
is Limited by R DS(on)
101
100
10-1
100
100 µs
1 ms
10 ms
DC
10 µs
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1 0 -1
D =0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
N otes :
1.
Zθ
(t)
JC
=
2 .4 8
/W
M ax.
2 . D u t y F a c t o r , D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
www.fairchildsemi.com
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