FQD3N50CTM View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FQD3N50CTM Datasheet PDF : 9 Pages
| |||
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2. I = 250µA
D
-50
0
50
100
150
200
T , Junction Temperature [°C]
J
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. I = 1.5 A
D
-50
0
50
100
150
200
T , Junction Temperature [°C]
J
Figure 10. Maximum Drain Current
vs. Case Temperature
102
Operation in This Area
is Limited by R
DS(on)
101
100
10-1
10-2
100
100 µs
1 ms
10 ms
100 ms
DC
Notes :
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 11. Transient Thermal Response Curve
3
2
1
0
25
50
75
100
125
150
T , Case Temperature [°C]
C
D = 0 .5
100
0.2
0.1
0.05
0.02
10-1 0.01
single pulse
Notes :
1. Z (t) = 3.5 °C/W M ax.
θJC
2. D uty Factor, D=t /t
12
3. T - T = P * Z (t)
JM
C
DM
θJC
PDM
t1
t2
1 0 -2
10 -5
10 -4
10 -3
1 0-2
1 0 -1
100
101
t , S quare W ave P ulse D uration [sec]
1
4
FQD3N50C / FQU3N50C Rev. B
www.fairchildsemi.com
|
|
Share Link: 