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FQD3N50C View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQD3N50C
Fairchild
Fairchild Semiconductor Fairchild
FQD3N50C Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
Notes :
1. 250µs Pulse Test
2. T = 25°C
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150°C
100
25°C
-55°C
10-1
2
Note
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
8.0
7.5
7.0
6.5
V = 10V
6.0
GS
5.5
5.0
4.5
4.0
V = 20V
GS
3.5
3.0
2.5
2.0
Note : T = 25°C
J
1.5
0
2
4
6
8
10
I , Drain Current [A]
D
100
10-1
0.2
150°C
25°C
Notes :
1. V = 0V
GS
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 5. Capacitance Characteristics
600
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
iss
400
C
oss
Note ;
200
C
rss
1. V = 0 V
GS
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
10
V = 100V
DS
V = 250V
8
DS
V = 400V
DS
6
4
2
Note : I = 3A
D
0
0
5
10
Q , Total Gate Charge [nC]
G
3
FQD3N50C / FQU3N50C Rev. B
www.fairchildsemi.com
 

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