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FQP30N06 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQP30N06
Fairchild
Fairchild Semiconductor Fairchild
FQP30N06 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
FQP30N06
N-Channel QFET® MOSFET
60 V, 30 A, 40 mΩ
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en-
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.
November 2013
Features
• 30 A, 60 V, RDS(on) = 40 mΩ (Max.) @ VGS = 10 V,
ID = 15 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 40 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GDS
TO-220
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP30N06
60
30
21.3
120
± 25
280
30
7.9
7.0
79
0.53
-55 to +175
300
FQP30N06
1.90
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
1
FQP30N06 Rev. C1
www.fairchildsemi.com
 

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