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FQP30N06-2003 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP30N06(2003) N-Channel QFET® MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQP30N06 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60
--
--
ID = 250 µA, Referenced to 25°C -- 0.06
--
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
--
--
1
--
--
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
--
--
100
--
-- -100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 15 A
VDS = 25 V, ID = 15 A (Note 4)
2.0 --
4.0
-- 0.031 0.04
-- 16
--
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 725 945
-- 270 350
-- 40
52
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 15 A,
RG = 25
-- 10
30
-- 85 180
-- 35
80
(Note 4, 5)
--
40
90
VDS = 48 V, ID = 30 A,
-- 19
25
VGS = 10 V
-- 5.4
--
(Note 4, 5)
--
8.5
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
30
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
120
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 30 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 30 A,
-- 45
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
65
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 360µH, IAS = 30A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 30A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A2, March 2003
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