FQP11N40C View Datasheet(PDF) - Fairchild Semiconductor
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FQP11N40C Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
Notes :
1. 250µs Pulse Test
2. T = 25°C
C
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
V = 10V
GS
1.5
1.0
V = 20V
GS
0.5
Note : T = 25°C
J
0
5
10
15
20
25
30
35
40
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
C
iss
C
oss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
Notes ;
rss
1. V = 0 V
GS
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
101
150°C
25°C
100
-55°C
10-1
2
Notes :
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
150°C
25°C
Notes :
1. V = 0V
GS
2. 250µs Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
10
V = 100V
DS
V = 250V
DS
8
V = 400V
DS
6
4
2
Note : I = 10.5A
D
0
0
5
10
15
20
25
30
Q , Total Gate Charge [nC]
G
3
FQP11N40C/FQPF11N40C Rev. C1
www.fairchildsemi.com
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