FQD3P50TM View Datasheet(PDF) - Fairchild Semiconductor
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FQD3P50TM Datasheet PDF : 9 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = -250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
100
10 ms
DC
10-1
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = -10 V
2. ID = -1.35 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
D =0.5
100
0 .2
0 .1
0 .05
1 0 -1
0 .02
0 .01
s in g le p u ls e
※ N ote s :
1 . Z θ JC(t) = 2 .5 ℃ /W M a x.
2. D u ty F actor, D =t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor International
Rev. A2, January 2009
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