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FQD2N50B View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQD2N50B
Fairchild
Fairchild Semiconductor Fairchild
FQD2N50B Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
101
is Limited by R DS(on)
100 µs 10µs
1 ms
100
10 ms
DC
10-1
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 1.05 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
1.8
1.5
1.2
0.9
0.6
0.3
0.0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0.5
100
0 .2
0 .1
0 .05
1 0 -1
0 .02
0 .01
sin g le p u ls e
N o tes :
1.
Z
θ
(t)
JC
=
4 .1 7
/W
M ax.
2 . D uty F acto r, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z
θ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, May 2000
 

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