FQD2N100 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FQD2N100 Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
FQD2N100
FQU2N100
Device
FQD2N100TM
FQU2N100TU
Package
DPAK
IPAK
Reel Size
330 mm
-
Tape Width
16 mm
-
Quantity
2500
70
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 1000 V, VGS = 0 V
VDS = 800 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
1000
--
--
--
--
--
--
0.976
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 0.8 A
VDS = 50 V, ID = 0.8 A
3.0
--
5.0
V
--
7.1
9
Ω
--
1.9
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
400 520
pF
--
40
52
pF
--
5
6.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 500 V, ID = 2.0 A,
--
RG = 25 Ω
--
--
(Note 4)
--
--
VDS = 800 V, ID = 2.0 A,
VGS = 10 V
(Note 4)
--
--
13
35
ns
30
70
ns
25
60
ns
35
80
ns
12 15.5 nC
2.5
--
nC
6.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.6 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.0 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 120mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
--
--
1.5
A
--
--
6.0
A
--
--
1.4
V
--
520
--
ns
--
2.3
--
µC
©2004 Fairchild Semiconductor Corporation
2
FQD2N100 / FQU2N100 Rev. C0
www.fairchildsemi.com
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