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FQD20N06L View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD20N06L 60V LOGIC N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQD20N06L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics
VGS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
101
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
100
80
V = 5V
GS
V = 10V
GS
60
40
Note : TJ = 25
20
0
10
20
30
40
50
60
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1500
1000
Coss
C
iss
500
C
rss
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100 150
10-1
0
25
2
-55
Notes :
1.
2.
V25DS0μ=s25PVulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
10
VDS = 30V
V = 48V
8
DS
6
4
2
Note : ID = 21A
0
0
4
8
12
16
20
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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