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FQD12N20LTM_F085 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQD12N20LTM_F085
Fairchild
Fairchild Semiconductor Fairchild
FQD12N20LTM_F085 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics
VGS
Top : 10 V
8.0 V
101
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.2
VGS = 5 V
0.9
VGS = 10V
0.6
0.3
0.0
0
6
12
18
24
30
36
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1800
1500
1200
900
600
300
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150
100
25
10-1
0
-55
Notes :
1. VDS = 30V
2. 250μs Pulse Test
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 40V
VDS = 100V
8
VDS = 160V
6
4
2
Note : ID = 11.6 A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
FQD12N20LTM_F085 Rev. B
3
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