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FQD10N20C View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQD10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Fairchild
Fairchild Semiconductor Fairchild
FQD10N20C Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
100 µs
101
1 ms
10 ms
DC
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 3.9 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
100
1 0 -1
D =0 .5
0 .2
0 .1
0 .05
0 .02
0 .01
s in g le p u ls e
N otes :
1. Z θJC(t) = 2.5 /W M ax.
2 . D u ty F a c to r, D = t1/t2
3. T JM - T C = P DM * ZθJC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u lse D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FQD10N20C / FQU10N20C Rev. C1
www.fairchildsemi.com
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