FQAF9N90 View Datasheet(PDF) - Fairchild Semiconductor
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FQAF9N90 Datasheet PDF : 8 Pages
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Typical Characteristics
Top : 15.V0GVS
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.4
2.1
VGS = 10V
1.8
V = 20V
GS
1.5
1.2
※ Note : TJ = 25℃
0.9
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
4000
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
2000
1000
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100
10-1
2
25oC
-55oC
※ Notes :
1.
2.
V25DS0μ=
50V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25G0Sμ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 180V
DS
VDS = 450V
8
V = 720V
DS
6
4
2
※ Note : ID = 8.6 A
0
0
10
20
30
40
50
60
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A, March 2001
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