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FQAF11N90 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQAF11N90
Fairchild
Fairchild Semiconductor Fairchild
FQAF11N90 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.6
V = 10V
GS
V = 20V
GS
1.2
0.8
Note : T = 25
J
0.4
0
8
16
24
32
40
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
Notes :
1. V = 0 V
GS
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
10
V = 180V
DS
VDS = 450V
8
V = 720V
DS
6
4
2
Note : ID = 11.4 A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, September 2000
 

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