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FQA9N90 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQA9N90
Fairchild
Fairchild Semiconductor Fairchild
FQA9N90 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
Notes :
1. 250µs Pulse Test
10-1
2. TC = 25
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. VDS = 50V
2. 250µs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.4
2.1
VGS = 10V
1.8
VGS = 20V
1.5
1.2
Note : TJ = 25
0.9
0
5
10
15
20
25
30
ID, Drain Current [A]
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
4000
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
2000
1000
0
10-1
C
rss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 180V
VDS = 450V
8
VDS = 720V
6
4
2
Note : ID = 8.6 A
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
3
FQA9N90_F109 Rev. A
www.fairchildsemi.com
 

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