FQA90N15_F109 View Datasheet(PDF) - Fairchild Semiconductor
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FQA90N15_F109 Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
102
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
10-1
Notes :
1. 250μs Pulse Test
2. T = 25oC
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.12
0.09
0.06
0.03
0.00
0
V = 10V
GS
V = 20V
GS
Note : T = 25oC
J
50
100
150
200
250
300
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
18000
15000
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
12000
9000
C
iss
C
oss
6000
3000
C
Notes :
rss
1. V = 0 V
GS
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
102
101
100
10-1
2
175oC
25oC
-55oC
Notes :
1. V = 30V
DS
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
102
101
100
10-1
0.0
175oC 25oC
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.8
1.2
1.6
2.0
2.4
V , Source-Drain Voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
V = 30V
10
DS
V = 75V
DS
8
V = 120V
DS
6
4
2
Note : I = 90 A
D
0
0
50
100
150
200
250
Q , Total Gate Charge [nC]
G
3
FQH90N15 / FQA90N15 Rev. C
www.fairchildsemi.com
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