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FQA8N80C_F109 Просмотр технического описания (PDF) - Fairchild Semiconductor

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FQA8N80C_F109 800V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQA8N80C_F109 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
Notes :
1. VGS = 0 V
2. ID=250µA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
Notes :
0.5
1. VGS = 10 V
2. ID = 4.0 A
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101
1 ms
10 ms
DC
100
10-1
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
100
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
D =0.5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sing le p ulse
N otes :
1. Zθ JC(t) = 0.57 /W M ax.
2. D uty Factor, D =t1/t2
3. T JM - TC = P DM * Zθ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S quare W ave P ulse D uration [sec]
4
FQA8N80C_F109 Rev. A
www.fairchildsemi.com
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