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FQA8N80C_F109 Просмотр технического описания (PDF) - Fairchild Semiconductor

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FQA8N80C_F109 800V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQA8N80C_F109 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
FQA8N80C_F109
800V N-Channel MOSFET
Features
• 8.4A, 800V, RDS(on) = 1.55@VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 13pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
November 2007
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3PN
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQA8N80C_F109
800
8.4
5.3
33.6
± 30
850
8.4
22
4.0
220
1.75
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.57
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
FQA8N80C_F109 Rev. A
www.fairchildsemi.com
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