FQA13N50CF View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FQA13N50CF Datasheet PDF : 8 Pages
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FQA13N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 15 A, 48 mΩ
April 2013
Features
• 15 A, 500 V, RDS(on) = 48 mΩ (Max.) @ VGS = 10 V,
ID = 7.5 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode (Typ. 100 ns)
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
G
G
D
TO-3PN
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8''"from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
S
FQA13N50CF
500
15
9.5
60
± 30
860
15
21.8
4.5
218
1.56
-55 to +150
300
FQA13N50CF
0.58
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
FQA13N50CF Rev. C0
www.fairchildsemi.com
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