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FQA11N90C_F109 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQA11N90C_F109
Fairchild
Fairchild Semiconductor Fairchild
FQA11N90C_F109 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
Notes :
1. 250µ s Pulse Test
10-1
2. TC = 25
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
Notes :
1. VDS = 50V
2. 250µ s Pulse Test
10-1
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.0
VGS = 10V
VGS = 20V
1.5
1.0
Note : T = 25
J
0.5
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 180V
10
VDS = 450V
8
VDS = 720V
6
4
2
Note : ID = 11A
0
0
10
20
30
40
50
60
70
QG, Total Gate Charge [nC]
3
FQA11N90C_F109 Rev. A
www.fairchildsemi.com
 

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