FQA11N90C-F109 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FQA11N90C-F109 Datasheet PDF : 8 Pages
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FQA11N90C_F109
900V N-Channel MOSFET
Features
• 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 23pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
September 2007
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3PN
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQA11N90C_F109
900
11.0
6.9
44.0
± 30
960
11.0
30
4.0
300
2.38
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.42
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
FQA11N90C_F109 Rev. A
www.fairchildsemi.com
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