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FQA10N80 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQA10N80 800V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQA10N80 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 4.9 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
102
is Limited by R DS(on)
10µ s
100µ s
101
1 ms
10 ms
DC
100
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
D =0 .5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .0 2
0 .0 1
s in g le p u lse
N otes :
1 . Z θ JC(t) = 0 .5 2 /W M a x .
2. D uty F actor, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
4
FQA10N80_F109 Rev. A
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