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FQA10N80-2006 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQA10N80(2006) 800V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQA10N80 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Package Marking and Ordering Information
Device Marking Device
FQA10N80
FQA10N80
FQA10N80
FQA10N80_F109
Package
TO-3P
TO-3PN
Reel Size
--
--
Tape Width
--
--
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800
BVDSS/
TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
VDS = 640 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
3.0
VGS = 10 V, ID = 4.9A
--
VDS = 50 V, ID = 4.9A (Note 4)
--
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400 V, ID = 9.8A,
--
RG = 25
--
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
--
(Note 4, 5)
--
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 640 V, ID = 9.8A,
--
VGS = 10 V
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =9.8 A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9.8 A,
dIF / dt = 100 A/µs
--
(Note 4)
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18mH, IAS =9.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.8A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.9
--
--
--
--
--
0.81
10
2100
215
24
45
115
125
75
55
12
26
--
--
--
780
9.4
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0
V
1.05
--
S
2700 pF
280 pF
30
pF
100
ns
240
ns
260
ns
160
ns
71
nC
--
nC
--
nC
9.8
A
39.2
A
1.4
V
--
ns
--
µC
2
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FQA10N80 Rev. A1
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