datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

FQA10N80C_F109 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQA10N80C_F109 800V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQA10N80C_F109 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
Notes :
1. 250µs PulseTest
10-1
2. TC = 25
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. VDS = 50V
2. 250µs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.5
2.0
VGS = 10V
1.5
VGS = 20V
1.0
Note : TJ = 25
0.5
0
5
10
15
20
25
30
ID, Drain Current [A]
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250µs PulseTest
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100
101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 160V
10
VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 10A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
3
FQA10N80C_F109 Rev. A
www.fairchildsemi.com
Direct download click here
 

Share Link : Fairchild
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]