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HCF40181BM1 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
HCF40181BM1
ST-Microelectronics
STMicroelectronics ST-Microelectronics
HCF40181BM1 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
HCF40181B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200K, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
Test Condition
Value (*)
Unit
Min. Typ. Max.
tPHL tPLH Propagation Delay Time
5
A or B to F (logic mode)
10
A or B to G or P
15
A or B to F,
5
Cn+4, or A = B
10
15
Cn to F
5
10
15
Cn to Cn+4
5
10
15
tTHL tTLH Transition Time
5
10
15
400 800
160 320 ns
120 240
500 1000
200 400 ns
140 280
320 640
135 270 ns
100 200
200 400
100 200 ns
70 140
100 200
50 100 ns
40 80
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C
(1) : If more than one unit is cascaded. tr should be made less than or equal to the sum of the transition time and the fixed propagation delay
of the output of the driving stage for the estimated capacitive load.
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200K
RT = ZOUT of pulse generator (typically 50)
7/10
 

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