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FL12KM-7A View Datasheet(PDF) - Renesas Electronics

Part NameDescriptionManufacturer
FL12KM-7A POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET Renesas
Renesas Electronics Renesas
FL12KM-7A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
VDS =
50V
16
100V
200V
12
8
Tch = 25°C
ID =12A
4
0
0
20 40 60 80 100
GATE CHARGE Qg (nC)
MITSUBISHI POWER MOSFET
FL12KM-7A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
VGS = 0V
Pulse Test
16
TC =
125°C
12
75°C
8
25°C
4
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
3
2
100
7
VGS = 10V
5
ID = 6A
Pulse Test
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
4.0
VDS = 10V
ID = 1mA
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
1.2
1.0
0.8
VGS = 0V
ID = 1mA
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
101
7
5 D = 1.0
3
2
0.5
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
100
0.2
7
5
0.1
3
2
10–1
7
5
3
2
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= tw
T
10–2
10–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Aug. 1999
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