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FL12KM-7A View Datasheet(PDF) - Renesas Electronics

Part NameDescriptionManufacturer
FL12KM-7A POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET Renesas
Renesas Electronics Renesas
FL12KM-7A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
Tc = 25°C
Pulse Test
16
ID =
24A
12
8
12A
4
6A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
Tc = 25°C
8
VDS = 10V
Pulse Test
4
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
2
103
Ciss
7
5
3
2
102
7
5
3
2 Tch = 25°C
f = 1MHZ
101 VGS = 0V
7
5
Crss
Coss
3100 2 3 5 7101 2 3 5 7 102 2 3 5
7103
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI POWER MOSFET
FL12KM-7A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
Tc = 25°C
Pulse Test
0.8
VGS = 20V
0.6
10V
0.4
0.2
0
10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
5
3
2
101
7
5
3
2
100
100
VDS =10V
Pulse Test
TC = 25°C 75°C 125°C
2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
2
102
td(off)
7
tf
5
tr
3
2
101
7
5100
td(on)
Tch = 25°C
VGS = 10V
VDD = 150V
RGEN = RGS = 50
2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A)
Aug. 1999
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