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FL12KM-7A View Datasheet(PDF) - Renesas Electronics

Part NameDescriptionManufacturer
FL12KM-7A POWER MOSFET HIGH-SPEED SWITCHING USE Nch POWER MOSFET Renesas
Renesas Electronics Renesas
FL12KM-7A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
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MITSUBISHI POWER MOSFET
FL12KM-7A
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 350V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 10V
ID = 6A, VGS = 10V
ID = 6A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 6A, VGS = 10V, RGEN = RGS = 50
IS = 6A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ.
Max.
350
V
±30
V
±10
µA
1.0
mA
2.0
3.0
4.0
V
0.32 0.40
1.90 2.40
V
10
S
1050
pF
150
pF
25
pF
20
ns
30
ns
160
ns
60
ns
1.5
2.0
V
3.57 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
7
5
3
tw = 10µs
2
101
7
100µs
5
3
2
1ms
100
7
5
TC = 25°C
3
Single Pulse
2
10ms
100ms
101
DC
7
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS =20V,10V,8V,6V
16
Tc = 25°C
Pulse Test
12
5V
8
4
PD = 35W
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10 VGS = 20V,10V,8V,6V
Tc = 25°C
Pulse Test
8
5V
6
4
PD = 35W
2
4V
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
Aug. 1999
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