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FJV3101 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FJV3101 NPN Epitaxial Silicon Transistor with Bias Resistor Fairchild
Fairchild Semiconductor Fairchild
FJV3101 Datasheet PDF : 5 Pages
1 2 3 4 5
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Power Dissipation
200
PD
Derate Above TA = 25°C
1.60
RθJA Thermal Resistance, Junction to Ambient
625
Note:
1. FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Unit
mW
mW/°C
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
fT
Cob
VI(off)
VI(on)
R1
R1/R2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input-Off Voltage
Input-On Voltage
Input Resistor
Resistor Ratio
Conditions
IC = 10 μA, IE = 0
IC = 100 μA, IB = 0
VCB = 40 V, IE = 0
VCE = 5 V, IC = 10 mA
IC = 10 mA, IB = 0.5 mA
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0,
f = 1.0 MHz
VCE = 5 V, IC = 100 μA
VCE = 0.3 V, IC = 20 mA
Min.
50
50
20
3
3.2
0.9
Typ.
250
3.7
4.7
1.0
Max.
0.1
0.3
0.5
6.2
1.1
Unit
V
V
μA
V
MHz
pF
V
V
kΩ
© 2002 Fairchild Semiconductor Corporation
FJV3101R Rev. 1.1.2
2
www.fairchildsemi.com
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