J4210-O View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

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J4210-O

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

-0

-0

IB = - 400mA

-1

-2

IB = - 300mA IB = - 250mA

IB = - 200mA

IB = - 150mA

IB = - 100mA

IB = - 50mA

IB = - 20mA

-3

-4

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characterstic

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

-0.0

-0.0

IC= - 5A

IC= - 10A

-0.4

-0.8

-1.2

-1.6

-2.0

IB [A], BASE CURRENT

Figure 3. VCE(sat) vs. IB Characteristics

-10

V =-4V

CE

-8

-6

Ta = 25 oC

-4

-2

Ta = 125 oC

Ta = - 25 oC

-0

-0.0

-0.5

-1.0

-1.5

-2.0

VBE [V], Base-Emitter On VOLTAGE

Figure 5. Base-Emitter On Voltage

1000

Ta = 125 oC

Ta = 25 oC

100

Ta = - 25 oC

V =-4V

CE

10

-0.1

-1

-10

IC [A], COLLECTOR CURRENT

Figure 2. DC current Gain

-1

I = 10 I

C

B

-0.1

Ta = 25 oC

Ta = 125 oC

Ta = - 25 oC

-0.01

-0.01

-0.1

-1

-10

IC [A], COLLECTOR CURRENT

Figure 4. Collector-Emitter Saturation Voltage

IC (Pulse)

-10

IC (DC)

t=10ms

t=100ms

-1

T = 25oC

C

Single Pulse

-0.1

-10

-100

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 6. Forward Bias Safe Operating Area

©2002 Fairchild Semiconductor Corporation

Rev. B, June 2002

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