J4210-R View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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J4210-R Datasheet PDF : 5 Pages
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FJA4210
Audio Power Amplifier
• High Current Capability : IC= -10A
• High Power Dissipation
• Wide S.O.A
• Complement to FJA4310
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1
TO-3P
1.Base 2.Collector 3.Emitter
Value
-200
-140
-6
-10
-1.5
100
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
* Pulse Test : PW=20µs
IC=-5mA, IE=0
IC=-50mA, RBE=∞
IE=-5mA, IC=0
VCB=-200V, IE=0
VEB=-6V, IC=0
VCE=-4V, IC=-3A
IC=-5A, IB=-0.5A
VCB=-10V, f=1MHz
VCE=-5V, IC=-1A
Min.
-200
-140
-6
50
Typ.
400
30
Max.
-10
-10
180
-0.5
Units
V
V
V
µA
µA
V
pF
MHz
hFE Classification
Classification
hFE
R
50 ~ 100
O
70 ~ 140
Y
90 ~ 180
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
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