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F08S60SN Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталогеКомпоненты Описаниепроизводитель
F08S60SN STEALTH? II Rectifier Fairchild
Fairchild Semiconductor Fairchild
F08S60SN Datasheet PDF : 5 Pages
1 2 3 4 5
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
VFM1
IF = 8A
IF = 8A
IRM1
VR = 600V
VR = 600V
trr
IF = 1A, di/dt = 100A/µs, VR = 30V
trr
Irr
S factor
IF = 8A, di/dt = 200A/µs, VR = 390V
Qrr
trr
Irr
S factor
IF = 8A, di/dt = 200A/µs, VR = 390V
Qrr
WAVL
Avalanche Energy ( L = 40mH)
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 25oC
TC = 125oC
Test Circuit and Waveforms
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
10
Typ.
Max. Units
2.7
2.1
3.4
-
V
-
-
100
500
µA
13
-
ns
15
25
ns
2.5
-
A
0.4
-
19
-
nC
32
-
ns
3.8
-
A
0.7
-
62
-
nC
-
-
mJ
FFP08S60SN Rev. A
2
www.fairchildsemi.com
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