FDS8962C View Datasheet(PDF) - Fairchild Semiconductor
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FDS8962C Datasheet PDF : 8 Pages
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Typical Characteristics: Q2 (P-Channel)
10
ID = -5A
8
6
VDS = -5V
-10V
-15V
4
2
0
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = -10V
SINGLE PULSE
0.1 RθJA = 125°C/W
TA = 25°C
1ms
10ms
100ms
1s
10s
DC
100µs
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
800
f = 1 MHz
700
VGS = 0 V
600
Ciss
500
400
300
Coss
200
100 Crss
0
0
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40
TA = 25°C
30
20
10
0
0.001 0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 135°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8962C Rev. A1
7
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