FDT461N View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FDT461N Datasheet PDF : 10 Pages
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FDT461N
N-Channel Logic Level PowerTrench® MOSFET
100V, 0.4A, 2.5Ω
Features
• rDS(ON) = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A
• Qg(tot) = 2.36nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
Applications
• Servo Motor Load Control
• DC-DC converters
April 2004
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
G
SOT-223
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA= 110oC/W)
Continuous (TA = 25oC, VGS = 4.5V, RθJA= 110oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJA
RθJA
RθJA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in2
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in2
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in2
D
D
S
Ratings
100
±20
0.54
0.4
Figure 4
6.3
1.13
9
-55 to 150
110
128
147
Units
V
V
A
A
A
mJ
W
mW/oC
oC
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
461
Device
FDT461N
Package
SOT-223
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
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