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FDT457N View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
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FDT457N Datasheet PDF : 4 Pages
1 2 3 4
Typical Electrical Characteristics
10
I D = 4A
8
6
VDS = 5V
10V
15V
4
2
0
0
2
4
6
8
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
50
20
10
5
RDS(ON) LIMIT
1
0.5
10m1sm1s00µs
11s00ms
DC10s
VGS = 10V
0.1 SINGLE PULSE
0.05
RθJA = 110°C/W
TAA = 25°C
0.01
0.1 0.2
0.5 1
2
5
10 20
50
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1000
400
Ciss
200
Coss
100
f = 1 MHz
Crss
50
VGS = 0 V
30
0.1
0.3
1
3
10
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
200
160
120
80
40
0
0.001
SINGLE PULSE
RθJA =110°C
TA= 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * RθJA
R θJA = 110 °C/W
P(pk)
t1 t 2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/ t 2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
FDT457N Rev.C
 

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