FDT434 View Datasheet(PDF) - Fairchild Semiconductor
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FDT434 Datasheet PDF : 5 Pages
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Typical Characteristics
5
I D = -6.0A
4
3
2
V
DS=
-5V
-10V
-15V
1
00
3
6
9
12
15
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
R DS(ON) LIMIT
1
10ms
100ms
1s
10s
DC
100 µs
VGS= -4.5V
0.1
SINGLE PULSE
R θJA= 110oC/W
TA= 25 oC
0.01
0.1
1
10
100
-V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1800
1600
1400
1200
1000
800
600
400
200
0
0
CISS
f = 1MHz
VGS = 0 V
CRSS
COSS
2
4
6
8
10
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
200
SINGLE PULSE
160
RθJA = 110oC/W
TA = 25oC
120
80
40
0
0.0001 0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.001
0.01
0.1
1
10
t1, TIME (sec)
RθJA(t) = r(t) * R θJA
RθJA = 110 °C/W
P(pk)
t1
t2
TJ - T A = P * R θJA(t)
Duty Cycle, D = t 1 / t2
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
©2011 Fairchild Semiconductor Corporation
4
FDT434P Rev. C2
www.fairchildsemi.com
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