FDS9958 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FDS9958 Datasheet PDF : 6 Pages
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July 2007
FDS9958
tm
Dual P-Channel PowerTrench® MOSFET
-60V, -2.9A, 105mΩ
Features
General Description
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A
RoHS Compliant
These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench®
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Load Switch
Power Management
D2
D2
D1
D1
D2 5
D2 6
Q2
4 G2
3 S2
Pin 1
G2
S2
G1
S1
SO-8
D1 7
Q1
D1 8
2 G1
1 S1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Dual Operation
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-60
±20
-2.9
-12
54
2
1.6
0.9
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDS9958
Device
FDS9958
Package
SO-8
40
(Note 1a)
78
°C/W
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
©2007 Fairchild Semiconductor Corporation
1
FDS9958 Rev.C
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
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