Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 8 A
VGS = 10 V, ID = 9 A, TJ =125 °C
VDS = 5 V, ID = 9 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 9 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 15 V,
ID = 9 A
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9 A
VGS = 0 V, IS = 2.1 A
IF = 9 A, di/dt = 100 A/µs
Min Typ Max Units
30
V
4
mV/°C
1
µA
±100 nA
1.0
1.7
3.0
V
-6
mV/°C
13.2 20.0
16.6 22.5 mΩ
18.5 28.0
36
S
707
940
pF
138
185
pF
88
135
pF
1.8
Ω
7
14
ns
3
10
ns
19
35
ns
4
10
ns
14
20
nC
8
11
nC
2.2
nC
2.8
nC
0.8
1.2
V
0.7
1.2
17
31
ns
6
12
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 8 A, VDD = 27 V, VGS = 10 V.
©2008 Fairchild Semiconductor Corporation
2
FDS8882 Rev.C
www.fairchildsemi.com