FDS8812NZ View Datasheet(PDF) - Fairchild Semiconductor
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FDS8812NZ Datasheet PDF : 6 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
30
ID = 250μA, referenced to 25°C
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
V
19
mV/°C
1
μA
±10
μA
On Characteristics (Note 2)
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250μA
1
ID = 250μA, referenced to 25°C
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 18A
VGS = 10V, ID = 20A, TJ = 125°C
VDS = 5V, ID = 20A
1.8
3
V
–7
mV/°C
3.1
4.0
3.8
4.9
mΩ
4.2
5.3
87
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
5205 6925 pF
945 1260 pF
580
870
pF
1.5
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15V, ID = 20A
VGS = 10V, RGEN = 6Ω
VGS = 0V to 10V
VGS = 0V to 5V
VDD = 15V
ID = 20A
18
33
ns
13
24
ns
55
88
ns
12
22
ns
90
126
nC
49
69
nC
16
nC
18
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1A (Note 2)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 20A, di/dt = 100A/μs
0.7
1.2
V
36
54
ns
33
50
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 50°C/W when mounted on a
1in2 pad of 2 oz copper.
b) 125°C/W when mounted on a
minimum pad .
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 3mH, IAS = 21A, VDD = 30V, VGS = 10V.
FDS8812NZ Rev.C
2
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