FDS8638 View Datasheet(PDF) - Fairchild Semiconductor
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FDS8638 Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25 °C unless otherwise noted
100
VGS = 10 V
80
VGS = 3.5 V
VGS = 4.5 V
60
VGS = 4 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
40
20
0
0.0
VGS = 3 V
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = 3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 4 V
VGS = 4.5 V
20
40
60
ID, DRAIN CURRENT (A)
VGS = 10 V
80
100
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 18 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
20
ID = 18 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
15
10
TJ = 125 oC
5
TJ = 25 oC
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
60
TJ = 150 oC
40
TJ = 25 oC
20
TJ = -55 oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
3
FDS8638 Rev.C
www.fairchildsemi.com
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