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FDS6994S 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명FDS6994S Fairchild
Fairchild Semiconductor Fairchild
상세내역Dual Notebook Power Supply N-Channel PowerTrench® SyncFet™
FDS6994S Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics for Q2
10
ID =8.2A
8
6
VDS = 10V
15V
20V
4
2
0
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
100µs
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4000
3000
2000
f = 1MHz
VGS = 0 V
Ciss
1000
0
0
Crss
Coss
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
RθJA(t) = r(t) * RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100
1000
FDS6994S Rev C2(W)
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General Description
The FDS6994S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6994S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

Features
• Q2: Optimized to minimize conduction losses
        Includes SyncFET Schottky body diode
  8.2A, 30V RDS(on) = 15 mΩ @ VGS = 10V
               RDS(on) = 17.5 mΩ @ VGS = 4.5V
• Q1: Optimized for low switching losses
        Low gate charge (85.5 nC typical)
  6.9A, 30V RDS(on) = 21 mΩ @ VGS = 10V
               RDS(on) = 26 mΩ @ VGS = 4.5V

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