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FDS6994S 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명FDS6994S Fairchild
Fairchild Semiconductor Fairchild
상세내역Dual Notebook Power Supply N-Channel PowerTrench® SyncFet™
FDS6994S Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS
Gate-Body Leakage
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 10 V, ID = 8.2A
VGS = 10 V, ID = 8.2 A, TJ = 125°C
VGS = 4.5 V, ID = 7.6 A
VGS = 10 V, ID = 6.9 A
VGS = 10 V, ID = 6.9 A, TJ = 125°C
VGS = 4.5 V, ID = 6.2 A
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 10 V, ID = 8.2 A
VDS = 10 V, ID = 6.9 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Type Min Typ Max Units
Q2 30
Q1 30
Q2
23
Q1
24
V
mV/°C
Q2
Q1
500
1
µA
All
±100 nA
Q2 1 1.5
Q1 1 1.9
3
3
V
Q2
Q1
–2
–5
mV/°C
Q2
10 15
15 24
11 17.5 m
Q1
16 21
24 33.5
19 26
Q2 30
Q1 20
A
Q2 42
S
Q1 41
Q2
2815
pF
Q1
800
Q2
540
pF
Q1
205
Q2
210
pF
Q1
90
Q2
2.844444.9
Q1
2.6 4.6
FDS6994S Rev C2(W)
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General Description
The FDS6994S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6994S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

Features
• Q2: Optimized to minimize conduction losses
        Includes SyncFET Schottky body diode
  8.2A, 30V RDS(on) = 15 mΩ @ VGS = 10V
               RDS(on) = 17.5 mΩ @ VGS = 4.5V
• Q1: Optimized for low switching losses
        Low gate charge (85.5 nC typical)
  6.9A, 30V RDS(on) = 21 mΩ @ VGS = 10V
               RDS(on) = 26 mΩ @ VGS = 4.5V

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