FDS6681 View Datasheet(PDF) - Fairchild Semiconductor
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FDS6681 Datasheet PDF : 6 Pages
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Typical Characteristics
105
VGS = -10V
90
-6.0V
75
60
45
-4.0V
-4.5V
-3.5V
30
15
0
0
-3.0V
0.5
1
1.5
2
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.4
VGS = -3.5V
2.2
2
1.8
1.6
-4.0V
1.4
-4.5V
-5.0V
1.2
-6.0V
-8.0V
1
-10V
0.8
0
15
30
45
60
75
90
105
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -20A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -30 -10 10 30 50 70 90 110 130 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.012
0.01
ID = -10A
0.008
0.006
TA = 125oC
0.004
TA = 25oC
0.002
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
105
VDS = -5V
90
75
60
45
TA = 125oC
30
-55oC
15
0
1
25oC
1.25
1.5
1.75
2
-VGS, GATE TO SOURCE VOLTAGE (V)
2.25
Figure 5. Transfer Characteristics.
1000
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6681Z Rev B (W)
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