FDS6681Z View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FDS6681Z Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at VGS = –10V
Qg(TOT)
Total Gate Charge at VGS = –5V
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –24 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –10 V, ID = –20 A
VGS = –4.5 V, ID = –17 A
VGS = –10 V, ID = –20 A,TJ=125°C
VDS = –5 V, ID = –20 A
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
VDS = –15 V, ID = –20 A
Min Typ Max Units
–30
V
–26
mV/°C
–1
µA
±10
µA
–1 –1.8 –3
V
6
mV/°C
3.8 4.6
mΩ
5.2 6.5
5.0 6.3
79
S
7540
pF
1400
pF
1120
pF
20 35
ns
9
18
ns
660 1060 ns
380 610
ns
185 260 nC
105 150 nC
26
nC
47
nC
FDS6681Z Rev B (W)
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