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FDS6162N7 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FDS6162N7
Fairchild
Fairchild Semiconductor Fairchild
FDS6162N7 Datasheet PDF : 6 Pages
1 2 3 4 5 6
May 2003
FDS6162N7
20V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
Synchronous rectifier
DC/DC converter
Features
23 A, 20 V
RDS(ON) = 3.5 m@ VGS = 4.5 V
RDS(ON) = 5.0 m@ VGS = 2.5 V
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5
Drain Contact
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6162N7
FDS6162N7
13’’
Ratings
20
± 12
23
60
3.0
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDS6162N7 Rev C2 (W)
 

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