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FDS4480 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FDS4480 40V N-Channel PowerTrench® MOSFET Fairchild
Fairchild Semiconductor Fairchild
FDS4480 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.1 A (Note 2)
trr
Diode Reverse Recovery Time
IF = 10.8 A, diF/dt = 100 A/µs
Qrr
Diode Reverse Recovery Charge
2.1
A
0.7 1.2
V
27
nS
58
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4480 Rev D (W)
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