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FDS4410A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
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FDS4410A Datasheet PDF : 5 Pages
1 2 3 4 5
Typical Characteristics
10
ID = 10 A
8
6
VDS = 10V
15V
20V
4
2
0
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1600
1200
800
f = 1MHz
VGS = 0 V
Ciss
Coss
400
Crss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 125°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIM E (sec)
RθJA (t) = r(t) * RθJA
RθJA = 125°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/t2
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the cir cuit board design.
1000
FDS4410A Rev. B
4
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