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FDS4410A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FDS4410A Datasheet PDF : 5 Pages
1 2 3 4 5
May 2005
FDS4410A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
Features
10 A, 30 V. RDS(ON) = 13.5 m@ VGS = 10 V
RDS(ON) = 20 m@ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low
RDS(ON)
High power and current handling capability
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D
D
D
D
SO-8
Pin 1
G
S
S
S
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain–Source Voltage
Gate–Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
Ratings
30
±20
10
50
2.5
1.0
–55 to +150
50
125
25
Package Marking and Ordering Information
Device Marking
FDS4410A
Device
FDS4410A
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDS4410A Rev. B
www.fairchildsemi.com
 

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